当前申请(专利权)人地址：
Room 3641-3649, The Hong Kong Jockey Club Enterprise Center, The Hong Kong University Of Science And Technology Clear Water Bay, Kowloon Hong Kong CN | Photonics Technology Center, The Hong Kong University Of Science And Technology Clear Water Bay, Kowloon Hong Kong CN | 5, 6F, Hung Chak House Hung Fuk Court Tin Wan Hong Kong CN
摘要：
A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.
权利要求：
What is claimed is:
1 . A method for manufacturing a monolithic Light Emitting Diode (LED) micro- display panel on an Active Matrix (AM) panel, comprising:
providing a substrate of the LED micro-display panel;
overlaying a plurality of layers of material on a surface of the substrate, the plurality of overlaying layers of material being configured in combination to emit light when activated;
patterning the plurality of overlaying layers of material by removing a part of each overlaying layers all the way down to the surface of the substrate;
depositing a current spreading layer on the patterned plurality of overlaying layers of material and surface of the substrate;
providing a metal multilayer on the current spreading layer;
patterning the metal multilayer in such a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, thereby forming the monolithic LED micro-display panel; and
combining the monolithic LED micro-display panel with the AM panel, said AM panel comprising a plurality of active control circuit chips with conductive solder material, said combining comprising flip-chip bonding the monolithic LEDs to the active control circuit chips via the conductive solder material, wherein each of the monolithic LEDs is electrically insulated from one another and independently controllable by corresponding one of the active control circuit chips boned thereto.
2. The method according to claim 1 , wherein the substrate of the LED micro-display panel comprises at least one material selected from the group consisting of: GaAs, SiC, Semi-insulating GaAs, Sapphire, and Quartz.
3. The method according to claim 1 , wherein the plurality of overlaying layers of material include a p-GaN layer, a Multiple Quantum Well (MQW) layer, and n-GaN layer.
4. The method according to claim 1 , wherein the current spreading layer forms p- electrodes of the LEDs, and the metal multilayer forms n-electrodes of the LEDs and reflective layers on the p-electronics, and wherein the array of the multiple LEDs are arranged in rows, the method further comprising:
connecting the n-electrodes of LEDs in a same row to a common N-bus line that is connected to a ground of the AM panel; and
connecting the p-electrodes of the multiple LEDs individually to outputs of corresponding active control circuit chips on which the multiple LEDs are flip-chip bonded.
5. The method according to claim 1 , wherein the patterning the plurality of overlaying layers of material is performed by Inductively Coupled Plasma (ICP) etching using Plasma-Enhanced Chemical Vapor Deposition (PECVD) grown S1O2 masks.
6. The method according to claim 1 , wherein each of the multiple monolithic LEDs has a mesa structure with a size equal to or less than 30Όχ30Όμηη2.
7. The method according to claim 1 , wherein the current spreading layer is a thin layer comprising at least one layer selected from the group consisting of a Ni/Au layer and an Ag/ITO layer.
8. The method according to claim 1 , wherein the metal multilayer comprises a Ti/AI/Ti/Au layer.
9. The method according to claim 1 , wherein the patterning of the plurality of overlaying layers of material by removing a part thereof all the way down to the surface of the substrate is performed by at least one method selected from the group consisting of wet etching and dry etching.
10. The method according to claim 1 , further comprising:
providing a passivation layer on the metal multilayer; and
defining openings in the passivation layer containing contact pads configured for the flip-chip bonding with the conductive solder material of the AM panel.
1 1 . The method according to claim 10, wherein the contact pads contained in the openings defined in the passivation layer comprises Ni/Au.
12. The method according to claim 10, wherein the passivation layer on the metal multilayer comprises at least one selected from the group consisting of: S1O2, SiNx and photoresist.
13. A method for manufacturing an assembly of a monolithic Light Emitting Diode (LED) micro-display panel including a plurality of LEDs thereon and an Active Matrix (AM) panel, comprising:
providing a substrate of the AM panel;
providing active control circuit chips on the substrate of the AM panel;
providing conductive solder material on the active control circuit chips; and combining the AM panel with the monolithic LED micro-display panel in such a configuration that the active control circuit chips are flip-chip bonded to the plurality of monolithic LEDs via the conductive solder material.
14. The method according to claim 13, further comprising:
depositing a passivation layer on the AM panel;
defining holes on the passivation layer;
depositing a seed layer by sputtering on the passivation layer;
coating a photoresist on the seed layer; and
patterning the photoresist by photolithography.
15. The method according to claim 13, wherein the active control circuit chips on the substrate of the AM panel is performed by Complimentary Metal-Oxide Semiconductor (CMOS) fabrication process.
16. The method according to claim 13, further comprising:
thinning and dicing the LED micro-display panel; and flipping the diced LED micro-display panel onto the AM panel in such a configuration that each of the plurality of LEDs on the diced LED micro-display panel faces corresponding one of the active control circuit chips on the AM panel.
17. The method according to claim 13, further comprising forming the conductive solder material in a ball shape after reflow in furnace.
18. A Light Emitting Diode (LED) display comprising:
a LED panel mounted with a plurality of LEDs arranged in rows and columns; and
an Active Matrix (AM) panel mounted with a plurality of active control circuits, wherein the LED panel is combined with the AM panel in such a configuration that each of the plurality of LEDs is associated with each of the active control circuits, each pair of an LED and an associated active control circuit being electrically insulated from other pairs of LEDs and associated active control circuits in the LED display, each LED being independently controllable by each associated active control circuit.
19. The LED display according to claim 18, wherein each LED includes an n- electrode and a p-electrode, n-electrodes of LEDs arranged in a same row being conductively connected to a common N-bus line that is conductively connected to a ground of the AM panel, a p-electrode of each LED being conductively connected to an output of associated active control circuit.
20. The LED display according to claim 18, wherein the plurality of LEDs are associated with the plurality of active control circuit via a conductive solder provided therebetween.
21 . The LED display according to claim 20, wherein the LED panel comprises a first substrate on which the plurality of LEDs are mounted, the first substrate comprising at least one material selected from the group consisting of: GaAs, SiC, Semi-insulating GaAs, Sapphire, and Quartz.
22. The LED display according to claim 21 , wherein the AM panel comprises a second substrate on which the active control circuits are mounted, the second substrate comprising at least one material selected from the group consisting of: single crystal silicon, silicon on insulator (SOI), Quartz, and glass.
23. The LED display according to claim 18, wherein the plurality of the active control circuits on the AM panel are one selected from the group consisting of: p-channel Metal Oxide Semiconductor (PMOS) transistor; n-channel Metal Oxide Semiconductor (NMOS) transistor; n-type amorphous silicon Thin Film Transistor (n-type a-Si TFT); p- type amorphous silicon Thin Film Transistor (p-type a-Si TFT); n-type poly crystalline silicon Thin Film Transistor (n-type p-Si TFT); p-type poly crystalline silicon Thin Film Transistor (p-type p-Si TFT); n-type SOI transistor; and p-type SOI transistor.
24. The LED display according to claim 18, wherein the plurality of active control circuits mounted on the AM panel comprises a CMOS.